參數(shù)資料
型號(hào): BT138F-600G
英文描述: DIODE ZENER TRIPLE ISOLATED 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOT-363 3K/REEL
中文描述: 晶閘管產(chǎn)品目錄
文件頁(yè)數(shù): 182/224頁(yè)
文件大?。?/td> 2697K
代理商: BT138F-600G
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)第161頁(yè)第162頁(yè)第163頁(yè)第164頁(yè)第165頁(yè)第166頁(yè)第167頁(yè)第168頁(yè)第169頁(yè)第170頁(yè)第171頁(yè)第172頁(yè)第173頁(yè)第174頁(yè)第175頁(yè)第176頁(yè)第177頁(yè)第178頁(yè)第179頁(yè)第180頁(yè)第181頁(yè)當(dāng)前第182頁(yè)第183頁(yè)第184頁(yè)第185頁(yè)第186頁(yè)第187頁(yè)第188頁(yè)第189頁(yè)第190頁(yè)第191頁(yè)第192頁(yè)第193頁(yè)第194頁(yè)第195頁(yè)第196頁(yè)第197頁(yè)第198頁(yè)第199頁(yè)第200頁(yè)第201頁(yè)第202頁(yè)第203頁(yè)第204頁(yè)第205頁(yè)第206頁(yè)第207頁(yè)第208頁(yè)第209頁(yè)第210頁(yè)第211頁(yè)第212頁(yè)第213頁(yè)第214頁(yè)第215頁(yè)第216頁(yè)第217頁(yè)第218頁(yè)第219頁(yè)第220頁(yè)第221頁(yè)第222頁(yè)第223頁(yè)第224頁(yè)
AN1008
Application Notes
http://www.teccor.com
+1 972-580-7777
AN1008 - 4
2002 Teccor Electronics
Thyristor Product Catalog
I
GT
:
DC Gate Trigger Current
SCR
I
GT
is the minimum DC gate current required to cause the thyris-
tor to switch from the non-conducting to the conducting state for
a specified load voltage and current as well as case temperature.
The characteristic curve illustrated in Figure AN1008.6 shows
that trigger current is temperature dependent. The thyristor
becomes less sensitive (requires more gate current) with
decreasing junction temperatures. The gate current should be
increased by a factor of two to five times the minimum threshold
DC trigger current for best operation. Where fast turn-on is
demanded and high di/dt is present or low temperatures are
expected, the gate pulse may be 10 times the minimum I
GT
, plus
it must be fast-rising and of sufficient duration in order to properly
turn on the thyristor.
Figure AN1008.6
Normalized DC Gate Trigger Current for All
Quadrants versus Case Temperature
Triac
The description for the SCR applies as well to the triac with the
addition that the triac can be fired in four possible modes (Figure
AN1008.7):
Quadrant I (main terminal 2 positive, gate positive)
Quadrant II (main terminal 2 positive, gate negative)
Quadrant III (main terminal 2 negative, gate negative)
Quadrant IV (main terminal 2 negative, gate positive)
Figure AN1008.7
Definition of Operating Quadrants
V
GT
: DC Gate Trigger Voltage
SCR
V
GT
is the DC gate-cathode voltage that is present just prior to
triggering when the gate current equals the DC trigger current. As
shown in the characteristic curve in Figure AN1008.8, the gate
trigger voltage is higher at lower temperatures. The gate-cathode
voltage drop can be higher than the DC trigger level if the gate is
driven by a current higher than the trigger current.
Triac
The difference in V
GT
for the SCR and the triac is that the triac
can be fired in four possible modes. The threshold trigger voltage
can be slightly different, depending on which of the four operating
modes is actually used.
Figure AN1008.8
Normalized DC Gate Trigger Voltage for All
Quadrants versus Case Temperature
I
L
: Latching Current
SCR
Latching current is the DC anode current above which the gate
signal can be withdrawn and the device stays on. It is related to,
has the same temperature dependence as, and is somewhat
greater than the DC gate trigger current. (Figure AN1008.1 and
Figure AN1008.2) Latching current is at least equal to or much
greater than the holding current, depending on the thyristor type.
Latching current is greater for fast-rise-time anode currents since
not all of the chip/die is in conduction. It is this dynamic latching
current that determines whether a device will stay on when the
gate signal is replaced with very short gate pulses. The dynamic
latching current varies with the magnitude of the gate drive cur-
rent and pulse duration. In some circuits, the anode current may
oscillate and drop back below the holding level or may even go
negative; hence, the unit may turn off and not latch if the gate sig-
nal is removed too quickly.
Triac
The description of this characteristic for the triac is the same as
for the SCR, with the addition that the triac can be latched on in
four possible modes (quadrants). Also, the required latching is
significantly different depending on which gating quadrants are
used. Figure AN1008.9 illustrates typical latching current require-
ments for the four possible quadrants of operation.
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C
) – C
R
I
G
I
G
(
C
(PMT2 POSITIVE
(NMT2 NEGATIVE
MT1
MT2
+
I
GT
REF
QII
QIII
MT1
I
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
ALL POLARITIES ARE REFERENCED TO MT1
(
-
)
I
GATE
(+)
I
GT
-
I
GATE
(
-
)
I
GATE
(+)
-
NOTE: Alternistors will not operate in Q IV
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) – C
V
G
C
R
V
G
相關(guān)PDF資料
PDF描述
BT138F-800G RECTIFIER BRIDGE 1A 50V 50A-ifsm 1.1V-vf 10uA-ir DFM 50/TUBE
BT136-800 Thyristor Product Catalog
BT139-500G Thyristor Product Catalog
BT139-600G Thyristor Product Catalog
BT137B-600 Thyristor Product Catalog
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT138F700 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186
BT138F700E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186
BT138F700G 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186
BT138F-800 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs
BT138F-800F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs