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參數(shù)資料
| 型號(hào)： | BT138B_SERIES_E |
| 英文描述： | Triacs sensitive gate |
| 中文描述： | 雙向敏感門 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | BT138B_SERIES_E |
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT138 series E
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
in free air
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
3.2
16
4.0
5.5
4.0
1.4
0.7
0.4
0.1
30
40
30
40
30
1.65
1.5
-
0.5
mA
mA
mA
mA
mA
V
V
V
mA
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
= 12 V; I
GT
= 0.1 A
I
T
= 15 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
I
TM
= 16 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
-
TYP.
50
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
September 1997
2
Rev 1.200
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| BT138F700E | TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186 |
| BT138F700G | TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186 |
| BT138SERIES | Triacs |
| BT138X_SERIES | Triacs |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BT138F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT138F-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT138F-500F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT138F-500G | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT138F-600 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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