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參數(shù)資料
| 型號(hào)： | BT138-800G |
| 英文描述： | Octal Bus Transceivers with 3-State Outputs 20-LCCC -55 to 125 |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁(yè)數(shù)： | 159/224頁(yè) |
| 文件大?。?/td> | 2697K |
| 代理商： | BT138-800G |
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Application Notes
AN1006
2002 Teccor Electronics
Thyristor Product Catalog
AN1006 - 7
http://www.teccor.com
+1 972-580-7777
8. Set
Power Dissipation
to
2.2 W.
(
2 W
on 370) For sensitive
SCRs, set at 0.5 W. (
0.4 W
on 370)
9. Set
Horizontal
knob to
2 V/DIV
.
10. Set
Vertical
knob to
50 mA/DIV
.
11. Increase
Variable Collector Supply Voltage
until voltage
reaches 12 V on CRT.
12. After 12 V setting is completed, change
Horizontal
knob to
Step Generator
.
Procedure 7: I
GT
To measure the I
GT
parameter:
1. Set
Step/Offset Amplitude
to 20% of maximum rated I
GT
.
Note: R
GK
should be removed when testing I
GT
.
2. Set
Left-Right Terminal Jack Selector
to correspond with
location of the test fixture.
3. Gradually increase
Offset Multiplier
until device reaches
the conduction point. (Figure AN1006.9) Measure I
GT
by fol-
lowing horizontal axis to the point where the vertical line
crosses axis. This measured value is I
GT
. (On 370, I
GT
will be
numerically displayed on screen under offset value.)
Figure AN1006.9
I
GT
= 25 μA
Procedure 8: V
GT
To measure the V
GT
parameter:
1. Set
Offset Multiplier
to
0
(zero). (Press
Aid
and O
ppose
at
the same time on 370.)
2. Set
Step Offset Amplitude
to 20% rated V
GT
.
3. Set
Left-Right Terminal Jack Selector
to correspond with
location of test fixture.
4. Gradually increase
Offset Multiplier
until device reaches
the conduction point. (Figure AN1006.10) Measure V
GT
by
following horizontal axis to the point where the vertical line
crosses axis. This measured value is V
GT
. (On 370, V
GT
will
be numerically displayed on screen, under offset value.)
Procedure 9:
GT
will be numerically displayed on screen
under offset value.)
Figure AN1006.10 V
GT
= 580 mV
Triacs
Triacs are full-wave bidirectional AC switches turned on when
current is supplied to the gate terminal of the device. If gate con-
trol in all four quadrants is required, then a sensitive gate triac is
needed, whereas a standard triac can be used if gate control is
only required in Quadrants I through III.
To connect the triac:
1. Connect the
Gate
to the
Base Terminal
(B).
2. Connect
MT1
to the
Emitter Terminal
(E).
3. Connect
MT2
to the
Collector Terminal
(C).
To begin testing, perform the following procedures.
Procedure 1: (+)V
DRM
, (+)I
DRM
, (-)V
DRM
, (-)I
DRM
Note: The (+) and (-) symbols are used to designate the polarity
MT2 with reference to MT1.
To measure the (+)V
DRM
, (+)I
DRM
, (-)V
DRM
, and (-)I
DRM
parameter:
1. Set
Variable Collector Supply Voltage Range
to appropri-
ate
Max Peak Volts
for device under test. (Value selected
should be equal to the device’s V
DRM
rating.)
WARNING: Do NOT exceed V
DRM
/V
RRM
rating of SCRs, tri-
acs, or
Quadracs
. These devices can be damaged.
2. Set
Horizontal
knob to sufficient scale to allow viewing of
trace at the required voltage level. (The
100 V/DIV
scale
should be used for testing devices having a V
DRM
rating of
600 V or greater; the
50 V/DIV
scale for testing parts rated
from 30 V to 500 V, and so on.)
3. Set
Mode
to
Leakage
.
4. Set
Polarity
to (+).
5. Set
Power Dissipation
to
0.5 W
. (
0.4 W
on 370)
6. Set
Terminal Selector
to
Emitter Grounded-Open Base
.
7. Set
Vertical
knob to ten times the maximum leakage current
(I
DRM
) specified for the device.
Note: The CRT screen readout should show 1% of the maxi-
mum leakage current. The vertical scale is divided by 1,000
when leakage mode is used.
50
mA
PER
V
E
R
T
DIV
PER
H
O
R
I
Z
DIV
PER
S
T
E
P
IGT
()k
DIV
9m
PER
DIV
10
A
5 K
50
mA
PER
V
E
R
T
DIV
PER
H
O
R
I
Z
DIV
PER
S
T
E
P
VGT
200
mV
250m
()k
DIV
9m
PER
DIV
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| BT136-700E | Transient Voltage Suppressor Diodes |
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| BT136B_SERIES_E | Transient Voltage Suppressor Diodes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT138-800G,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT138B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT138B_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| BT138B_SERIES_E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs sensitive gate |
| BT138B-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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