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參數(shù)資料
| 型號： | BT138-700G |
| 英文描述： | TRIAC|700V V(DRM)|12A I(T)RMS|TO-220 |
| 中文描述： | 可控硅| 700V的五（DRM）的| 12A條口（T）的有效值|至220 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 47K |
| 代理商： | BT138-700G |
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT138 series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
triacs in a plastic envelope, intended
for
use
in
general
bidirectional switching and phase
control
applications,
sensitivity is required in all four
quadrants.
passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
purpose
BT138-
500E
500
600E
600
800E
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
where
high
I
T(RMS)
I
TSM
12
95
12
95
12
95
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
-
-
-
95
105
45
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT138B_SERIES | Triacs |
| BT138B_SERIES_E | Triacs sensitive gate |
| BT138F700 | TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186 |
| BT138F700E | TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186 |
| BT138F700G | TRIAC|700V V(DRM)|12A I(T)RMS|SOT-186 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT138-800 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT138-800,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT138-800 | 制造商:NXP Semiconductors 功能描述:TRIAC 12A 800V TO-220 |
| BT138-800/DG | 制造商:NXP Semiconductors 功能描述:Tube 制造商:NXP Semiconductors 功能描述:Thyristor TRIAC 800V 105A 3-Pin(3+Tab) TO-220AB |
| BT138-800/DG,127 | 功能描述:雙向可控硅 4Q TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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