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| 型號： | BT137X-500G |
| 英文描述： | DIODE ZENER TRIPLE ISOLATED 200mW 7.45Vz 5mA-Izt 0.0604 1uA-Ir 5 SOT-363 3K/REEL |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁數(shù)： | 183/224頁 |
| 文件大?。?/td> | 2697K |
| 代理商： | BT137X-500G |
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Application Notes
AN1008
2002 Teccor Electronics
Thyristor Product Catalog
AN1008 - 5
http://www.teccor.com
+1 972-580-7777
Figure AN1008.9
Typical Triac Latching (I
L
) Requirements for Four
Quadrants versus Gate Current (I
GT
)
I
H
: Holding Current — SCR and Triac
The holding current is the DC principal on-state current below
which the device will not stay in regeneration/on state after latch-
ing and gate signal is removed. This current is equal to or lower
in value than the latching current (Figure AN1008.1 and Figure
AN1008.2) and is related to and has the same temperature
dependence as the DC gate trigger current shown in Figure
AN1008.10. Both minimum and maximum holding current may be
important. If the device is to stay in conduction at low-anode cur-
rents, the maximum holding current of a device for a given circuit
must be considered. The minimum holding current of a device
must be considered if the device is expected to turn off at a low
DC anode current. Note that the low DC principal current condi-
tion is a DC turn-off mode, and that an initial on-state current
(latching current) is required to ensure that the thyristor has been
fully turned on prior to a holding current measurement.
Figure AN1008.10
Normalized DC Holding Current versus
Case Temperature
dv/dt, Static: Critical Rate-of-rise of Off-state Voltage —
SCR and Triac
Static dv/dt is the minimum rate-of-rise of off-state voltage that
a device will hold off, with gate open, without turning on.
Figure AN1008.11 illustrates the exponential definition. This
value will be reduced by a positive gate signal. This charac-
teristic is temperature-dependent and is lowest at the maxi-
mum-rated junction temperature. Therefore, the characteristic
is determined at rated junction temperature and at rated
forward off-state voltage which is also a worst-case situation.
Line or other transients which might be applied to the thyristor
in the off state must be reduced, so that neither the rate-of-
rise nor the peak voltage are above specifications if false firing
is to be prevented. Turn-on as result of dv/dt is non-destructive
as long as the follow current remains within current ratings of
the device being used.
Figure AN1008.11
Exponential Rate-of-rise of Off-state Voltage
Defining dv/dt
dv/dt, Commutating: Critical Rate-of-rise of
Commutation Voltage — Triac
Commutating dv/dt is the rate-of-rise of voltage across the main
terminals that a triac can support (block without switching back
on) when commutating from the on state in one half cycle to the
off state in the opposite half cycle. This parameter is specified at
maximum rated case temperature (equal to T
J
) since it is temper-
ature-dependent. It is also dependent on current (commutating
di/dt) and peak reapplied voltage (line voltage) and is specified at
rated current and voltage. All devices are guaranteed to commu-
tate rated current with a resistive load at 50 Hz to 60 Hz. Com-
mutation of rated current is not guaranteed at higher frequencies,
and no direct relationship can be made with regard to current/
temperature derating for higher-frequency operation. With induc-
tive loading, when the voltage is out of phase with the load cur-
rent, a voltage stress (dv/dt) occurs across the main terminals of
the triac during the zero-current crossing. (Figure AN1008.12) A
snubber (series RC across the triac) should be used with induc-
tive loads to decrease the applied dv/dt to an amount below the
minimum value which the triac can be guaranteed to commutate
off each half cycle.
II
III
IV
I
0
1.0
2.0
3.0
4.0
5.0
6.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I
L
I
GT
— mA
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) – C
I
H
C
R
I
H
INITIAL ON-STATE CURRENT
= 400 mA dc
Critical dv/dt
dt
V
D
t
t = RC
0
t
63% of V
D
V
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT137X-600 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137X-600,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137X-600/DG,127 | 功能描述:雙向可控硅 4Q TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137X-600/L02Q | 功能描述:TRIAC 600V 8A 制造商:nxp semiconductors 系列:* 零件狀態(tài):停產(chǎn) 標(biāo)準(zhǔn)包裝:50 |
| bt137x-600127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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