參數(shù)資料
型號(hào): BT137S-800F
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: 4Q Triac
中文描述: 4Q雙向可控硅
封裝: BT137S-800F<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù): 6/14頁
文件大小: 157K
代理商: BT137S-800F
BT137S-800F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 31 March 2011
6 of 14
NXP Semiconductors
BT137S-800F
4Q Triac
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 10 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
see
Figure 11
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
see
Figure 11
V
D
= 800 V; T
j
= 125 °C
-
5
25
mA
-
8
25
mA
-
11
25
mA
-
30
70
mA
I
L
latching current
-
7
30
mA
-
16
45
mA
-
5
30
mA
-
7
45
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
5
1.3
0.7
20
1.65
1.5
mA
V
V
0.25
0.4
-
V
I
D
Dynamic characteristics
dV
D
/dt
off-state current
-
0.1
0.5
mA
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
DM
= 536 V; T
j
= 125 °C; exponential
waveform; gate open circuit
V
D
= 400 V; T
j
= 95 °C;
dI
com
/dt = 3.6 A/ms; I
T
= 8 A; gate open
circuit
I
TM
= 12 A; V
D
= 800 V; I
G
= 0.1 mA;
dI
G
/dt = 5 A/μs
50
250
-
V/μs
dV
com
/dt
-
20
-
V/μs
t
gt
gate-controlled turn-on
time
-
2
-
μs
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