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參數(shù)資料
| 型號： | BT137M |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 1-of-8 Decoder 20-LCCC -55 to 125 |
| 中文描述： | 雙向可控硅 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BT137M |
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BT137S-
(or BT137M)
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
...F
UNIT
...
...G
I
GT
Gate trigger current
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
11
30
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
30
45
30
45
20
30
45
30
45
20
1.65
1.5
-
45
60
45
60
40
mA
mA
mA
mA
mA
V
V
V
16
5
7
5
1.3
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BT137S-
(or BT137M)
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 8 A;
dI
/dt = 3.6 A/ms; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
MIN.
...F
50
TYP.
MAX.
UNIT
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
20
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
October 1997
2
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT137S-500 | DIODE ZENER DUAL ISOLATED 200mW 16.2Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-363 3K/REEL |
| BT137S-500D | DIODE ZENER SINGLE 150mW 16Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-523 3K/REEL |
| BT137S-500E | DIODE ZENER TRIPLE ISOLATED 200mW 16.2Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-363 3K/REEL |
| BT137S-500F | DIODE ZENER SINGLE 200mW 16Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-323 3K/REEL |
| BT137S-500G | Triacs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT137M_SERIES_E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs sensitive gate |
| BT137M-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT137M-500D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs logic level |
| BT137M-500E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT137M-500F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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