參數(shù)資料
型號(hào): BT137M-600G
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 晶閘管
英文描述: Octal Buffers and Line Drivers with 3-State Outputs 20-CDIP -55 to 125
中文描述: 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
封裝: PLASTIC, SOT-428, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 52K
代理商: BT137M-600G
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BT137S-
(or BT137M)
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
...F
UNIT
...
...G
I
GT
Gate trigger current
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
11
30
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
30
45
30
45
20
30
45
30
45
20
1.65
1.5
-
45
60
45
60
40
mA
mA
mA
mA
mA
V
V
V
16
5
7
5
1.3
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BT137S-
(or BT137M)
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 8 A;
dI
/dt = 3.6 A/ms; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
MIN.
...F
50
TYP.
MAX.
UNIT
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
20
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
October 1997
2
Rev 1.200
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