參數資料
型號: BT137F-800
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: DIODE DUAL SW 75V 350MW SOT-23
中文描述: 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, FULL PACK-3
文件頁數: 5/7頁
文件大?。?/td> 51K
代理商: BT137F-800
Philips Semiconductors
Product specification
Triacs
BT137F series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
100
150
0
0.5
1
1.5
2
2.5
3
BT137
T50
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
0
0.5
1
1.5
VT / V
2
2.5
3
0
5
10
15
20
25
BT137
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.264 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
0.01
0.1
1
10
BT137
Zth j-hs (K/W)
tp
P
D
t
bidirectional
unidirectional
with heatsink compound
without heatsink compound
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
7.9
4.7
dV/dt (V/us)
2.8
dIcom/dt =
10 A/ms
6.1
3.6
off-state dV/dt limit
BT137...G SERIES
BT137 SERIES
BT137...F SERIES
February 1996
5
Rev 1.100
相關PDF資料
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