參數(shù)資料
型號: BT137F-600F
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: DIODE SWITCHING DUAL COMMON-ANODE 75V 215mA-Io 150mW 3000ns-trr SOT-523 3K/REEL
中文描述: 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 51K
代理商: BT137F-600F
Philips Semiconductors
Product specification
Triacs
BT137F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance
junction to heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
4.5
6.5
-
K/W
K/W
K/W
R
th j-a
Thermal resistance
junction to ambient
55
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...F
UNIT
BT137F-
...
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
11
30
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
30
45
30
45
20
30
45
30
45
20
1.65
1.5
-
45
60
45
60
40
mA
mA
mA
mA
mA
V
V
V
16
5
7
5
1.3
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
February 1996
2
Rev 1.100
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