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參數(shù)資料
| 型號(hào)： | BT137BSERIESE |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs sensitive gate |
| 中文描述： | 雙向敏感門 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 51K |
| 代理商： | BT137BSERIESE |
Philips Semiconductors
Product specification
Triacs
BT137B series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
minimum footprint, FR4 board
MIN.
-
-
-
TYP.
-
-
55
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...F
UNIT
BT137B-
...
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
11
30
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
30
45
30
45
20
30
45
30
45
20
1.65
1.5
-
45
60
45
60
40
mA
mA
mA
mA
mA
V
V
V
16
5
7
5
1.3
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...F
50
TYP.
MAX.
UNIT
BT137B-
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 8 A;
dI
/dt = 3.6 A/ms; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
20
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
October 1997
2
Rev 1.200
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| BT137F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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