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參數(shù)資料
| 型號(hào)： | BT137B-500D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Triacs logic level |
| 中文描述： | 500 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263 |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 50K |
| 代理商： | BT137B-500D |
Philips Semiconductors
Product specification
Triacs
logic level
BT137B series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
triacsinaplasticenvelopesuitablefor
surface mounting, intended for use in
general
purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX. UNIT
BT137B-
500D
500
8
65
600D
600
8
65
bidirectional
phase
devices
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
V
A
A
control
are
logic
integrated
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
500
1
-600
600
1
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
102 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
8
A
-
-
-
65
71
21
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
October 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT137B-500E | Triacs sensitive gate(雙向可控硅敏感門(mén)) |
| BT137B-800E | Triacs sensitive gate(雙向可控硅敏感門(mén)) |
| BT137B-500 | Triacs(雙向可控硅) |
| BT137B-500G | Triacs(雙向可控硅) |
| BT137B-600G | Triacs(雙向可控硅) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT137B500DT/R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|500V V(DRM)|8A I(T)RMS|SOT-404 |
| BT137B-500E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT137B500ET/R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|500V V(DRM)|8A I(T)RMS|SOT-404 |
| BT137B-500F | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs |
| BT137B-500G | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs |
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