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| 型號(hào)： | BT137-700E |
| 英文描述： | TRIAC|700V V(DRM)|8A I(T)RMS|TO-220 |
| 中文描述： | 可控硅| 700V的五（DRM）的| 8A條口（T）的有效值|至220 |
| 文件頁(yè)數(shù)： | 129/224頁(yè) |
| 文件大小： | 2697K |
| 代理商： | BT137-700E |
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Application Notes
AN1002
2002 Teccor Electronics
Thyristor Product Catalog
AN1002 - 3
http://www.teccor.com
+1 972-580-7777
Figure AN1002.6
Latching and Holding Characteristics of Thyristor
Similar to gating, latching current requirements for triacs are dif-
ferent for each operating mode (quadrant). Definitions of latching
modes (quadrants) are the same as gating modes. Therefore,
definitions shown in Figure AN1002.2 and Figure AN1002.3 can
be used to describe latching modes (quadrants) as well. The fol-
lowing table shows how different latching modes (quadrants)
relate to each other. As previously stated, Quadrant II has the
lowest latching current sensitivity of all four operating quadrants.
Example of a 4 Amp Triac:
If I
L
(I) = 10 mA, then
I
L
(II) = 40 mA
I
L
(III) = 12 mA
I
L
(IV) = 11 mA
Latching current has even somewhat greater temperature depen-
dence compared to the DC gate trigger current. Applications with
low temperature requirements should have sufficient principal
current (anode current) available to ensure thyristor latch-on.
Two key test conditions on latching current specifications are
gate drive and available principal (anode) current durations.
Shortening the gate drive duration can result in higher latching
current values.
Holding Current of SCRs and Triacs
Holding current (I
H
) is the minimum principal current required to
maintain the thyristor in the on state. Holding current can best be
understood by relating it to the “drop-out” or “must release” level
of a mechanical relay. Figure AN1002.6 shows the sequences of
gate, latching, and holding currents. Holding current will always
be less than latching. However, the more sensitive the device,
the closer the holding current value approaches its latching cur-
rent value.
Holding current is independent of gating and latching, but the
device must be fully latched on before a holding current limit can
be determined.
Holding current modes of the thyristor are strictly related to the
voltage polarity across the main terminals. The following table
illustrates how the positive and negative holding current modes
of triacs relate to each other.
Example of a 10 A triac:
If I
H
(+) = 10 mA, then
I
H
(-) = 13 mA
Holding current is also temperature-dependent like gating and
latching shown in Figure AN1002.7. The initial on-state current is
200 mA to ensure that the thyristor is fully latched on prior to
holding current measurement. Again, applications with low tem-
perature requirements should have sufficient principal (anode)
current available to maintain the thyristor in the on-state condi-
tion.
Both minimum and maximum holding current specifications may
be important, depending on application. Maximum holding cur-
rent must be considered if the thyristor is to stay in conduction at
low principal (anode) current; the minimum holding current must
be considered if the device is expected to turn off at a low princi-
pal (anode) current.
Figure AN1002.7
Typical DC Holding Current vs Case Temperatures
Example of a 10 A triac:
If I
H
(+) = 10 mA at 25 °C, then
I
H
(+)
≈
7.5 mA at 65 °C
Relationship of Gating, Latching, and
Holding Currents
Although gating, latching, and holding currents are independent
of each other in some ways, the parameter values are related. If
gating is very sensitive, latching and holding will also be very
sensitive and vice versa. One way to obtain a sensitive gate and
not-so-sensitive latching-holding characteristic is to have an
“amplified gate” as shown in Figure AN1002.8.
Typical Ratio of
at 25 °C
Type
4 A Triac
10 A Triac
Operating Mode
Quadrant II
4
Quadrant I
1
Quadrant III
1.2
Quadrant IV
1.1
1
4
1.1
1
Time
Time
Holding Current Point
Zero Crossing Point
Principal
Current
Through
Thyristor
Gate Pulse
Gate
Drive
to Thyristor
Latching
Current
Point
I
In given Quadrant
L
Quadrant
1
(
)
(
)
------------I
Typical Triac Holding Current Ratio
Type
4 A Triac
10 A Triac
Operating Mode
I
H
(+)
1
I
H
(-)
1.1
1
1.3
2.0
1.5
1.0
.5
0
-40
-15
+25
+65
+100
Case Temperature (T
C
) – C
R
I
H
I
H
C
INITIAL ON-STATE CURRENT = 200 mA dc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT137-700G | TRIAC|700V V(DRM)|8A I(T)RMS|TO-220 |
| BT137B_SERIES | Triacs |
| BT137B_SERIES_E | Triacs sensitive gate |
| BT137M_SERIES_E | Transient Voltage Suppressor Diodes |
| BT137S_SERIES | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT137-700G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|8A I(T)RMS|TO-220 |
| BT137-800 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137-800,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137-800E | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT137-800E,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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