參數(shù)資料
型號(hào): BT136X
廠商: NXP Semiconductors N.V.
英文描述: Triacs
中文描述: 雙向可控硅
文件頁數(shù): 3/7頁
文件大?。?/td> 50K
代理商: BT136X
Philips Semiconductors
Product specification
Triacs
BT136X series
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...F
50
TYP.
MAX.
UNIT
BT136X-
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 4 A;
dI
/dt = 1.8 A/ms; gate
open circuit
I
TM
= 6 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
50
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
October 1997
3
Rev 1.200
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