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參數(shù)資料
| 型號： | BT136S-500G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs |
| 中文描述： | 500 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁數(shù)： | 182/224頁 |
| 文件大小： | 2697K |
| 代理商： | BT136S-500G |
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AN1008
Application Notes
http://www.teccor.com
+1 972-580-7777
AN1008 - 4
2002 Teccor Electronics
Thyristor Product Catalog
I
GT
:
DC Gate Trigger Current
SCR
I
GT
is the minimum DC gate current required to cause the thyris-
tor to switch from the non-conducting to the conducting state for
a specified load voltage and current as well as case temperature.
The characteristic curve illustrated in Figure AN1008.6 shows
that trigger current is temperature dependent. The thyristor
becomes less sensitive (requires more gate current) with
decreasing junction temperatures. The gate current should be
increased by a factor of two to five times the minimum threshold
DC trigger current for best operation. Where fast turn-on is
demanded and high di/dt is present or low temperatures are
expected, the gate pulse may be 10 times the minimum I
GT
, plus
it must be fast-rising and of sufficient duration in order to properly
turn on the thyristor.
Figure AN1008.6
Normalized DC Gate Trigger Current for All
Quadrants versus Case Temperature
Triac
The description for the SCR applies as well to the triac with the
addition that the triac can be fired in four possible modes (Figure
AN1008.7):
Quadrant I (main terminal 2 positive, gate positive)
Quadrant II (main terminal 2 positive, gate negative)
Quadrant III (main terminal 2 negative, gate negative)
Quadrant IV (main terminal 2 negative, gate positive)
Figure AN1008.7
Definition of Operating Quadrants
V
GT
: DC Gate Trigger Voltage
SCR
V
GT
is the DC gate-cathode voltage that is present just prior to
triggering when the gate current equals the DC trigger current. As
shown in the characteristic curve in Figure AN1008.8, the gate
trigger voltage is higher at lower temperatures. The gate-cathode
voltage drop can be higher than the DC trigger level if the gate is
driven by a current higher than the trigger current.
Triac
The difference in V
GT
for the SCR and the triac is that the triac
can be fired in four possible modes. The threshold trigger voltage
can be slightly different, depending on which of the four operating
modes is actually used.
Figure AN1008.8
Normalized DC Gate Trigger Voltage for All
Quadrants versus Case Temperature
I
L
: Latching Current
SCR
Latching current is the DC anode current above which the gate
signal can be withdrawn and the device stays on. It is related to,
has the same temperature dependence as, and is somewhat
greater than the DC gate trigger current. (Figure AN1008.1 and
Figure AN1008.2) Latching current is at least equal to or much
greater than the holding current, depending on the thyristor type.
Latching current is greater for fast-rise-time anode currents since
not all of the chip/die is in conduction. It is this dynamic latching
current that determines whether a device will stay on when the
gate signal is replaced with very short gate pulses. The dynamic
latching current varies with the magnitude of the gate drive cur-
rent and pulse duration. In some circuits, the anode current may
oscillate and drop back below the holding level or may even go
negative; hence, the unit may turn off and not latch if the gate sig-
nal is removed too quickly.
Triac
The description of this characteristic for the triac is the same as
for the SCR, with the addition that the triac can be latched on in
four possible modes (quadrants). Also, the required latching is
significantly different depending on which gating quadrants are
used. Figure AN1008.9 illustrates typical latching current require-
ments for the four possible quadrants of operation.
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C
) – C
R
I
G
I
G
(
C
(PMT2 POSITIVE
(NMT2 NEGATIVE
MT1
MT2
+
I
GT
REF
QII
QIII
MT1
I
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
ALL POLARITIES ARE REFERENCED TO MT1
(
-
)
I
GATE
(+)
I
GT
-
I
GATE
(
-
)
I
GATE
(+)
-
NOTE: Alternistors will not operate in Q IV
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) – C
V
G
C
R
V
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT136S500T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|4A I(T)RMS|TO-252AA |
| BT136S-600 | 制造商:NXP Semiconductors 功能描述:Triac,600V,4A,BT136S-600 |
| BT136S-600 /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT136S-600,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT136S-600118 | 制造商:NXP Semiconductors 功能描述:TRIAC 600V 4A SOT-428 制造商:NXP Semiconductors 功能描述:TRIAC 600V 4A DPAK |
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