參數(shù)資料
型號(hào)： BT136M-800E
廠商： NXP SEMICONDUCTORS
元件分類： 晶閘管
英文描述： Octal Registered Transceivers with 3-State Outputs 24-SOIC -40 to 85
中文描述： 800 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
封裝： PLASTIC, SOT-428, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 49K
代理商： BT136M-800E
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
3.0
10
2.5
4.0
2.2
1.4
0.7
0.4
0.1
15
20
15
20
15
1.70
1.5
-
0.5
mA
mA
mA
mA
mA
V
V
V
mA
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
-
I
D
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
I
TM
= 6 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
-
TYP.
50
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
July 1997
2
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT136M-800F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs
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BT136MSERIESD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs logic level
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