參數(shù)資料
型號(hào): BT136M-600E
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Octal Registered Transceivers with 3-State Outputs 24-SOIC -40 to 85
中文描述: 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252
封裝: PLASTIC, SOT-428, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 49K
代理商: BT136M-600E
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT136E
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
0
0.5
1
1.5
VT / V
2
2.5
3
0
2
4
6
8
10
12
BT136
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.27 V
Rs = 0.091 ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
0.01
0.1
1
10
BT136
Zth j-mb (K/W)
unidirectional
bidirectional
tp
P
D
t
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
July 1997
4
Rev 1.000
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