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參數(shù)資料
| 型號： | BT136-600G |
| 英文描述： | CompactFlash Bus-interface Chip 114-BGA MICROSTAR -40 to 85 |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁數(shù)： | 19/224頁 |
| 文件大?。?/td> | 2697K |
| 代理商： | BT136-600G |
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2002 Teccor Electronics
Thyristor Product Catalog
E0 - 3
http://www.teccor.com
+1 972-580-7777
Electrical Parameter Terminology
Thyristor
di/dt (Critical Rate-of-rise of On-state Current) –
Maximum
value of the rate-of-rise of on-state current which a thyristor can
withstand without deleterious effect
dv/dt (Critical Rate-of-rise of Off-state Voltage or Static
dv/dt) –
Minimum value of the rate-of-rise of principal voltage
which will cause switching from the off state to the on state
dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a
Triac (Commutating dv/dt) –
Minimum value of the rate-of-rise
of principal voltage which will cause switching from the off state
to the on state immediately following on-state current conduction
in the opposite quadrant
I
2
t (RMS Surge (Non-repetitive) On-state Fusing Current) –
Measure of let-through energy in terms of current and time for
fusing purposes
I
BO
(Breakover Current) –
Principal current at the breakover
point
I
DRM
(Repetitive Peak Off-state Current) –
Maximum leakage
current that may occur under the conditions of V
DRM
I
GT
(Gate Trigger Current) –
Minimum gate current required to
switch a thyristor from the off state to the on state
I
H
(Holding Current) –
Minimum principal current required to
maintain the thyristor in the on state
I
PP
(Peak Pulse Current) –
Peak pulse current at a short time
duration and specified waveshape
I
RRM
(Repetitive Peak Reverse Current) –
Maximum leakage
current that may occur under the conditions of V
RRM
I
S
(Switching Current) –
Current at V
S
when a sidac switches
from the clamping state to on state
I
T(RMS)
(On-state Current) –
Anode cathode principal current
that may be allowed under stated conditions, usually the full-
cycle RMS current
I
TSM
(Surge (Non-repetitive) On-state Current) –
Peak single
cycle AC current pulse allowed
P
G(AV)
(Average Gate Power Dissipation) –
Value of gate
power which may be dissipated between the gate and main ter-
minal 1 (or cathode) average over a full cycle
P
GM
(Peak Gate Power Dissipation) –
Maximum power which
may be dissipated between the gate and main terminal 1 (or
cathode) for a specified time duration
R
θ
JA
(Thermal Resistance, Junction-to-ambient) –
Tempera-
ture difference between the thyristor junction and ambient divided
by the power dissipation causing the temperature difference
under conditions of thermal equilibrium
Note
: Ambient is defined as the point where temperature does
not change as a result of the dissipation.
R
θ
JC
(Thermal Resistance, Junction-to-case) –
Temperature
difference between the thyristor junction and the thyristor case
divided by the power dissipation causing the temperature differ-
ence under conditions of thermal equilibrium
t
gt
(Gate-controlled Turn-on Time) –
Time interval between
the 10% rise of the gate pulse and the 90% rise of the principal
current pulse during switching of a thyristor from the off state to
the on state
t
q
(Circuit-commutated Turn-off Time) –
Time interval
between the instant when the principal current has decreased to
zero after external switching of the principal voltage circuit and
the instant when the SCR is capable of supporting a specified
principal voltage without turning on
V
BO
(Breakover Voltage) –
Principal voltage at the breakover
point
V
DRM
(Repetitive Peak Off-state Voltage) –
Maximum allow-
able instantaneous value of repetitive off-state voltage that may
be applied across a bidirectional thyristor (forward or reverse
direction) or SCR (forward direction only)
V
GT
(Gate Trigger Voltage) –
Minimum gate voltage required to
produce the gate trigger current
V
RRM
(Repetitive Peak Reverse Voltage) –
Maximum allow-
able instantaneous value of a repetitive reverse voltage that may
be applied across an SCR without causing reverse current ava-
lanche
V
S
(Switching Voltage) –
Voltage point after V
BO
when a sidac
switches from a clamping state to on state
V
T
(On-state Voltage) –
Principal voltage when the thyristor is in
the on state
Diode Rectifiers
I
F(AV)
(Average Forward Current) –
Average forward conduc-
tion current
I
FM
(Maximum (Peak) Reverse Current) –
Maximum reverse
leakage current that may occur at rated V
RRM
I
F(RMS)
(RMS Forward Current) –
RMS forward conduction cur-
rent
I
FSM
(Maximum (Peak) Forward (Non-repetitive) Surge
Current) –
Maximum (peak) forward single cycle AC surge cur-
rent allowed for specified duration
V
FM
(Maximum (Peak) Forward Voltage Drop) –
Maximum
(peak) forward voltage drop from the anode to cathode at stated
conditions
V
R
(Reverse Blocking Voltage) –
Maximum allowable DC
reverse blocking voltage that may be applied to the rectifier
V
RRM
(Maximum (Peak) Repetitive Reverse Voltage) –
Maxi-
mum peak allowable value of a repetitive reverse voltage that
相關(guān)PDF資料 |
PDF描述 |
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| BT136-800F | 8-Bit Multi-Level Pipeline Register 24-PDIP -40 to 85 |
| BT136S | Triacs |
| BT136_SERIES | Transient Voltage Suppressor Diodes |
| BT136_SERIES_D | Transient Voltage Suppressor Diodes |
| BT136_SERIES_E | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT136-700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|TO-220 |
| BT136-700E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|TO-220 |
| BT136-700G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|TO-220 |
| BT136-800 | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT136-800E | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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