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| 型號(hào)： | BT136-600E |
| 英文描述： | High Performance 1:10 Clock Buffer for General Purpose Applications 24-TSSOP -40 to 85 |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁(yè)數(shù)： | 121/224頁(yè) |
| 文件大?。?/td> | 2697K |
| 代理商： | BT136-600E |
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2002 Teccor Electronics
Thyristor Product Catalog
AN1001 - 1
http://www.teccor.com
+1 972-580-7777
AN1001
Fundamental Characteristics of Thyristors
Introduction
The thyristor family of semiconductors consists of several very
useful devices. The most widely used of this family are silicon
controlled rectifiers (SCRs), triacs, sidacs, and diacs. In many
applications these devices perform key functions and are real
assets in meeting environmental, speed, and reliability specifica-
tions which their electro-mechanical counterparts cannot fulfill.
This application note presents the basic fundamentals of SCR,
triac, sidac, and diac thyristors so the user understands how they
differ in characteristics and parameters from their electro-
mechanical counterparts. Also, thyristor terminology is defined.
SCR
Basic Operation
Figure AN1001.1 shows the simple block construction of an SCR.
Figure AN1001.1
SCR Block Construction
The operation of a PNPN device can best be visualized as a spe-
cially coupled pair of transistors as shown in Figure AN1001.2.
Figure AN1001.2
Coupled Pair of Transistors as a SCR
The connections between the two transistors trigger the occur-
rence of regenerative action when a proper gate signal is applied
to the base of the NPN transistor. Normal leakage current is so
low that the combined h
of the specially coupled two-transistor
feedback amplifier is less than unity, thus keeping the circuit in
an off-state condition. A momentary positive pulse applied to the
gate biases the NPN transistor into conduction which, in turn,
biases the PNP transistor into conduction. The effective h
FE
momentarily becomes greater than unity so that the specially
coupled transistors saturate. Once saturated, current through the
transistors is enough to keep the combined h
FE
greater than
unity. The circuit remains “on” until it is “turned off” by reducing
the anode-to-cathode current (I
) so that the combined h
is less
than unity and regeneration ceases. This threshold anode current
is the holding current of the SCR.
Geometric Construction
Figure AN1001.3 shows cross-sectional views of an SCR chip
and illustrations of current flow and junction biasing in both the
blocking and triggering modes.
Figure AN1001.3
Cross-sectional View of SCR Chip
Gate
Gate
J1
J2
J3
P
N
P
N
Schematic Symbol
Block Construction
Cathode
Anode
Cathode
Anode
N
P
N
P
N
P
Gate
Cathode
J1
J2
J2
J3
Anode
N
N
N
Cathode
Gate
Anode
Load
P
P
Two-transistor
Schematic
Two-transistor Block
Construction Equivalent
Gate
(+)
Cathode
(-)
IGT
P
N
N
P
(+)
(+)
Anode
IT
Forward Bias and Current Flow
Gate
Cathode
P
N
N
P
(-)
Anode
Reverse Bias
Reverse Biased
Junction
(-)
Anode
Equivalent Diode
Relationship
Forward
Blocking
Junction
Cathode
(-)
(+)
Anode
Equivalent Diode
Relationship
Cathode
(+)
Reverse Biased
Gate Junction
AN1001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT136-600F | High Performance 1:10 Clock Buffer for General Purpose Applications 24-TSSOP -40 to 85 |
| BT136-600G | CompactFlash Bus-interface Chip 114-BGA MICROSTAR -40 to 85 |
| BT136-800F | 8-Bit Multi-Level Pipeline Register 24-PDIP -40 to 85 |
| BT136S | Triacs |
| BT136_SERIES | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT136-600E,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT136-600E/02,127 | 功能描述:雙向可控硅 Thyristor TRIAC 600V 27A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT136-600E/L01,127 | 功能描述:雙向可控硅 Thyristor TRIAC 600V 27A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| bt136-600e127 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:TRIACSENSITIVE GATE 600V 4A TO-220AB |
| BT136-600F | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
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