參數(shù)資料
型號(hào): BT134WSERIESE
廠商: NXP Semiconductors N.V.
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 雙向敏感門
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 57K
代理商: BT134WSERIESE
Philips Semiconductors
Product specification
Triacs
BT134W series
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus solder point temperature T
sp
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
sp
108C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
= 180
120
90
60
30
BT134W
IT(RMS) / A
Ptot / W
Tsp(max) / C
125
122
119
116
113
110
107
104
1
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT134W
Tsp / C
IT(RMS) / A
108 C
1
10
100
1000
BT134W
T / s
ITSM / A
100us
1ms
10ms
100ms
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T2- G+ quadrant
0
0.1
1
10
0.5
1
1.5
2
BT134W
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
2
4
6
8
10
12
BT134W
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
3
Rev 1.200
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