參數(shù)資料
型號: BT134WSERIESD
廠商: NXP Semiconductors N.V.
英文描述: Triacs logic level
中文描述: 雙向可控硅邏輯電平
文件頁數(shù): 2/7頁
文件大小: 57K
代理商: BT134WSERIESD
Philips Semiconductors
Product specification
Triacs
BT134W series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-sp
Thermal resistance
junction to solder point
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
MIN.
-
TYP.
-
MAX.
15
UNIT
K/W
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
...F
UNIT
BT134W-
...
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
5
8
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
11
30
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
7
20
30
20
30
15
20
30
20
30
15
1.50
1.5
-
30
45
30
45
30
mA
mA
mA
mA
mA
V
V
V
16
5
7
5
1.2
0.7
0.4
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 2 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
...F
50
TYP.
MAX.
UNIT
BT134W-
...
...G
200
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
=67% V
DRM(max)
;
T
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 C;
I
T(RMS)
= 1 A;
dI
/dt = 1.8 A/ms; gate
open circuit
I
TM
= 1.5 A;
V
D
= V
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s;
100
250
-
V/
μ
s
dV
com
/dt
Critical rate of change of
commutating voltage
-
-
10
50
-
V/
μ
s
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
September 1997
2
Rev 1.200
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