參數(shù)資料
型號: BSX63
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN switching transistors
中文描述: 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁數(shù): 4/8頁
文件大?。?/td> 51K
代理商: BSX63
1997 Jun 19
4
Philips Semiconductors
Product specification
NPN switching transistors
BSX62; BSX63
CHARACTERISTICS
T
case
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
CBO
collector cut-off current
BSX62
V
CB
= 40 V
V
CB
= 40 V; T
case
= 150
°
C
100
100
nA
μ
A
I
CBO
collector cut-off current
BSX63
V
CB
= 60 V
V
CB
= 60 V; T
case
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V
100
100
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BSX62-10; BSX63-10
BSX62-16; BSX63-16
DC current gain
BSX62-10; BSX63-10
BSX62-16; BSX63-16
DC current gain
BSX62-10; BSX63-10
BSX62-16; BSX63-16
collector-emitter saturation voltage
110
180
h
FE
I
C
= 1 A; V
CE
= 1 V
63
100
100
160
160
250
h
FE
I
C
= 2 A; V
CE
= 5 V
30
70
120
70
700
800
1.2
1.3
1
1.2
1.3
70
V
CEsat
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 100 mA; V
CE
= 1 V
I
C
= 1 A; V
CE
= 1 V
I
C
= 2 A; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 200 mA; V
CE
= 10 V; f = 100 MHz
mV
mV
V
V
V
V
V
pF
MHz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
f
T
collector capacitance
transition frequency
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 1 A; I
Bon
= 50 mA; I
Boff
=
50 mA
300
1.5
ns
μ
s
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