參數(shù)資料
型號(hào): BSX59
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN switching transistors
中文描述: 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 51K
代理商: BSX59
1997 May 22
4
Philips Semiconductors
Product specification
NPN switching transistors
BSX59; BSX61
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 4 V
500
300
nA
μ
A
I
EBO
emitter cut-off current
BSX59
BSX61
emitter cut-off current
DC current gain
30
30
20
300
500
50
90
nA
nA
μ
A
I
EBO
h
FE
I
C
= 0; V
EB
= 4 V; T
j
= 150
°
C
I
C
= 150 mA; V
CE
= 1 V
I
C
= 500 mA; V
CE
= 1 V
I
C
= 1 A; V
CE
= 5 V
V
CEsat
collector-emitter saturation voltage
BSX59
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
300
500
1
mV
mV
V
V
CEsat
collector-emitter saturation voltage
BSX61
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
500
700
1.3
1
mV
mV
V
V
V
BEsat
V
BEsat
base-emitter saturation voltage
base-emitter saturation voltage
BSX59
BSX61
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
0.85
0.7
250
6
36
1.2
1.3
1.8
10
50
V
V
V
pF
pF
MHz
V
BEsat
C
c
C
e
f
T
I
C
= 1 A; I
B
= 100 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
Switching times (between 10% and 90% levels)
t
on
turn-on time
BSX59
BSX61
turn-off time
BSX59
BSX61
I
Con
= 500 mA; I
Bon
= 50 mA;
I
Boff
=
50 mA
17
18
35
50
ns
ns
t
off
I
Con
= 500 mA; I
Bon
= 50 mA;
I
Boff
=
50 mA
45
70
60
100
ns
ns
相關(guān)PDF資料
PDF描述
BSX61 NPN switching transistors
BSX61 Small Signal Transistors
BSX59 Small Signal Transistors
BSX62 NPN switching transistors
BSX63-10 NPN switching transistors
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