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參數(shù)資料
| 型號(hào)： | BSX45 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CHOKE RF CONFORMAL COATED .27UH |
| 中文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BSX45 |
1997 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistors
BSX45; BSX46; BSX47
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
CBO
collector cut-off current
BSX45; BSX46
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°
C
30
10
nA
μ
A
I
CBO
collector cut-off current
BSX47
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
amb
= 150
°
I
C
= 0; V
EB
= 5 V
I
C
= 100
μ
A; V
CE
= 1 V
30
10
10
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16; BSX47-16
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16
DC current gain
BSX45-10; BSX46-10; BSX47-10
BSX45-16; BSX46-16
collector-emitter saturation voltage
BSX45; BSX46
collector-emitter saturation voltage
BSX47
base-emitter voltage
15
25
40
90
h
FE
I
C
= 100 mA; V
CE
= 1 V
63
100
100
160
160
250
h
FE
I
C
= 500 mA; V
CE
= 1 V
25
35
40
60
h
FE
I
C
= 1 A; V
CE
= 1 V
20
30
V
CEsat
I
C
= 1 A; I
B
= 100 mA
1
V
V
CEsat
I
C
= 500 mA; I
B
= 25 mA
0.75
900
1
1.5
2
mV
V
V
V
V
BE
I
C
= 100 mA; V
CE
= 1 V
I
C
= 500 mA; V
CE
= 1 V
I
C
= 1 A; V
CE
= 1 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
C
c
collector capacitance
BSX45
BSX46
BSX47
emitter capacitance
transition frequency
noise figure
50
3.5
25
20
15
80
pF
pF
pF
pF
MHz
dB
C
e
f
T
F
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 100
μ
A; V
CE
= 5 V; R
S
= 1 k
;
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
5 mA
200
850
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSX46 | Small Signal Transistors |
| BSX47-16 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-205AD |
| BSX47-10 | NPN medium power transistors |
| BSX47 | NPN medium power transistors |
| BSX47 | Small Signal Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSX45-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTORS |
| BSX45-16 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTORS |
| BSX45-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTORS |
| BSX46 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO39 |
| BSX46-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTORS |
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