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參數(shù)資料
| 型號(hào)： | BSX32 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN switching transistor |
| 中文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | BSX32 |
1997 May 28
4
Philips Semiconductors
Product specification
NPN switching transistor
BSX32
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
μ
A
nA
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
EB
= 4 V
V
CE
= 1 V; note 1
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
I
C
= 1 A; V
CE
= 5 V; note 1
V
CE
= 1 V; T
amb
=
55
°
C; note 1
I
C
= 100 mA
I
C
= 500 mA
I
C
= 100 mA; I
B
= 10 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 1 A; I
B
= 100 mA; note 1
I
C
= 100 mA; I
B
= 10 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 1 A; I
B
= 100 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
4
300
30
60
25
20
60
60
150
h
FE
h
FE
DC current gain
DC current gain
30
15
300
170
360
600
800
250
500
850
900
1.5
2
10
55
V
CEsat
collector-emitter saturation voltage
mV
mV
mV
mV
V
V
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 500 mA; I
Bon
= 50 mA;
I
Boff
=
50 mA
35
60
ns
ns
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