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參數(shù)資料
| 型號： | BSV52 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Small Signal NPN Transistors(小信號NPN晶體管) |
| 中文描述： | 小信號NPN晶體管（小信號npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | BSV52 |
THERMAL DATA
R
thj-amb
R
thj-SR
Mountedon a ceramic substrate area = 7 x 5 x 0.5 mm
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
620
400
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 20 V
for
SO2369/SO2369A
V
CB
= 10 V
for
BSV52
V
CB
= 10 V
for
BSV52
T
j
= 150
o
C
400
100
5
nA
nA
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CB
= 20 V
for
SO2369A
I
C
= 10
μ
A
for
SO2369/SO2369A
for
BSV52
400
nA
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
B
= 0)
40
20
V
V
I
C
= 10 mA
for
SO2369/SO2369A
for
BSV52
15
12
V
V
I
C
= 10
μ
A
for
SO2369/SO2369A
for
BSV52
40
20
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10
μ
A
for
SO2369/SO2369A
for
BSV52
4.5
5
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
for
BSV52
I
C
= 10 mA
for
SO2369A
for
BSV52
I
C
= 30 mA
for
SO2369 BSV52
I
C
= 50 mA
for
BSV52
I
C
= 100 mA
for
SO2369A
I
B
= 0.3 mA
I
B
= 1 mA
I
B
= 3 mA
I
B
= 5 mA
I
B
= 10 mA
0.3
0.2
0.25
0.25
0.4
0.5
V
V
V
V
V
V
V
BE(sat)
Collector-Base
Saturation Voltage
I
C
= 10 mA
I
C
= 30 mA
for
SO2369A
I
C
= 50 mA
for
BSV52
I
C
= 100 mA
for
SO2369A
I
B
= 1 mA
I
B
= 3 mA
I
B
= 5 mA
I
B
= 10 mA
0.7
0.85
1.15
1.2
1.6
V
V
V
V
h
FE
DC Current Gain
I
C
=1mA
I
C
=10mA V
CE
=0.35V for
SO2369A
I
C
=10mA
V
CE
=1V
I
C
=30mA
V
CE
=0.4V
I
C
=50mA
V
CE
=1V
I
C
=100mA V
CE
=1V
I
C
=100mA V
CE
=2V
V
CE
=1V
for
BSV52
for
All types
for
SO2369A
for
BSV52
for
SO2369A
for
SO2369
25
40
40
30
25
20
20
120
120
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
BSV52/SO2369/SO2369A
2/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSV52 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSV52,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSV52 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-23 |
| BSV52/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SCHALT SMD KLEINSIGNAL |
| BSV52_D87Z | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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