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參數(shù)資料
| 型號： | BST50; |
| 英文描述： | 7300 PDF4608 04/16/97 BST50; BST51; BST52NPN Darlington transistors |
| 中文描述： | 7300 PDF4608 04/16/97 BST50，BST51; BST52NPN達林頓晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BST50; |
1999 Apr 26
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
96
16
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
collector cut-off current
BST50
BST51
BST52
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
= 45 V
V
BE
= 0; V
CE
= 60 V
V
BE
= 0; V
CE
= 80 V
I
C
= 0; V
EB
= 4 V
V
CE
= 10 V; note 1; (see Fig.2)
I
C
= 150 mA
I
C
= 500 mA
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150
°
C
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 500 mA; V
CE
= 5 V;
f = 100 MHz
50
50
50
50
nA
nA
nA
nA
I
EBO
h
FE
1000
2000
1.3
1.3
V
CEsat
collector-emitter saturation
voltage
V
V
V
BEsat
f
T
base-emitter saturation voltage
transition frequency
200
1.9
V
MHz
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
off
turn-on time
turn-off time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
0.5 mA
400
1500
ns
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BST50 T/R | 功能描述:達林頓晶體管 TRANS DARLINGTON TAPE-7 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BST50,115 | 功能描述:達林頓晶體管 TRANS DARLINGTON RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BST50; | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:7300 PDF4608 04/16/97 BST50; BST51; BST52NPN Darlington transistors |
| BST50115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN 45V 0.5A SOT89 |
| BST50T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 45V V(BR)CEO | 500MA I(C) | SOT-89 |
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