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參數(shù)資料
| 型號： | BSS92 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 200-V (D-S) MOSFETs |
| 中文描述： | P通道200 -五（副）的MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 60K |
| 代理商： | BSS92 |
1997 Jun 19
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS92
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum
10 mm
×
10 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
240
±
20
150
600
1
+150
150
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
55
V
V
mA
mA
W
°
C
°
C
open drain
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
240
0.8
60
TYP.
10
200
65
20
6
MAX.
2.8
200
60
±
100
20
UNIT
V
(BR)DSS
V
GSth
I
DSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
V
GS
= 0; I
D
=
250
μ
A
V
DS
= V
GS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
60 V
V
GS
= 0; V
DS
=
200 V
V
DS
= 0; V
GS
=
±
20 V
V
GS
=
10 V; I
D
=
100 mA
V
DS
=
25 V; I
D
=
100 mA
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
GS
= 0; V
DS
=
25 V; f = 1 MHz
V
V
nA
μ
A
nA
mS
pF
pF
pF
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
Switching times
(see Figs 2 and 3)
t
on
turn-on time
V
GS
= 0 to
10 V; V
DD
=
50 V;
I
D
=
250 mA
V
GS
=
10 to 0 V; V
DD
=
50 V;
I
D
=
250 mA
5
ns
t
off
turn-off time
20
ns
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