參數(shù)資料
型號: BSR20
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP switching transistor
中文描述: 300 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 4/8頁
文件大?。?/td> 67K
代理商: BSR20
1997 Apr 21
4
Philips Semiconductors
Product specification
PNP high-voltage transistors
BSR20; BSR20A
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
BSR20
I
E
= 0; V
CB
=
100 V
I
E
= 0; V
CB
=
100 V; T
amb
= 100
°
C
100
100
nA
μ
A
I
CBO
collector cut-off current
BSR20A
I
E
= 0; V
CB
=
120 V
I
E
= 0; V
CB
=
120 V; T
amb
= 100
°
C
I
C
= 0; V
EB
=
4 V
I
C
=
1 mA; V
CE
=
5 V
50
50
50
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BSR20
BSR20A
DC current gain
BSR20
BSR20A
DC current gain
BSR20
BSR20A
collector-emitter saturation
voltage
30
50
h
FE
I
C
=
10 mA; V
CE
=
5 V
40
60
180
240
h
FE
I
C
=
50 mA; V
CE
=
5 V
40
50
200
500
6
V
CEsat
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
5 mA
I
E
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
10 V;
f = 100 MHz
mV
mV
pF
C
c
f
T
collector capacitance
transition frequency
BSR20
BSR20A
100
100
400
300
MHz
MHz
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