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參數(shù)資料
| 型號： | BSP92 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 180 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 52K |
| 代理商： | BSP92 |
April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP92
FEATURES
Low threshold voltage V
GS(th)
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
SOT223 envelope, intended for use
as a surface-mounted device in line
current interruptor in telephone sets
and for application in relay, high
speed and line transformer drivers.
PINNING - SOT223
PIN
DESCRIPTION
1
2
3
4
gate
drain
source
drain
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
R
DS(on)
V
GS(th)
PARAMETER
MAX.
UNIT
drain-source voltage
DC drain current
drain-source on-resistance
gate-source threshold voltage
240
180
20
1.8
V
mA
V
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
MAM121
4
1
2
3
Top view
s
d
g
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1.
Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
6 cm
2
.
SYMBOL
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature range
junction temperature
240
20
180
720
1.5
150
150
V
V
mA
mA
W
°
C
°
C
open drain
up to T
amb
= 25
°
C (note 1)
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1)
83.3 K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSP92E6327 | 制造商:Infineon Technologies AG 功能描述:0.2 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET |
| BSP92P | 制造商:Infineon Technologies AG 功能描述:MOSFET P-Channel 250V 0.26A SOT223 |
| BSP92P E6327 | 功能描述:MOSFET P-CH 250V 260MA SOT-223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| BSP92P L6327 | 功能描述:MOSFET SIPMOS Sm-Signal TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSP92P_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal-Transistor |
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