參數(shù)資料
型號(hào): BSP254A
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: P-channel enhancement mode vertical D-MOS transistor
中文描述: 200 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 76K
代理商: BSP254A
April 1995
4
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured at f = 1 MHz;
V
DS
= 25 V; V
GS
= 0.
V
GS
= 0 to 10 V;
I
D
= 250 mA;
V
DD
= 50 V.
SYMBOL
V
(BR)DSS
PARAMETER
CONDITIONS
V
GS
= 0
I
D
= 10
μ
A
V
DS
= 200 V
V
GS
= 0
±
V
GS
= 20 V
V
DS
= 0
V
GS
= V
DS
I
D
= 1 mA
V
GS
= 10 V
I
D
= 200 mA;
V
DS
= 25 V
I
D
= 200 mA
note 1
note 1
note 1
note 2
note 2
MIN.
TYP.
MAX.
UNIT
drain-source breakdown voltage
250
V
I
DSS
drain-source leakage current
1
μ
A
±
I
GSS
gate-source leakage current
100
nA
V
GS(th)
gate-source threshold voltage
0.8
2.8
V
R
DS(on)
drain-source on-resistance
10
15
Y
fs
transfer admittance
100
200
mS
C
iss
C
oss
C
rss
t
on
t
off
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
65
20
6
5
20
90
30
15
10
30
pF
pF
pF
ns
ns
Fig.3 Switching times test circuit.
handbook, halfpage
MBB689
50
VDD =
50 V
ID
0 V
10 V
Fig.4 Input and output waveforms.
handbook, halfpage
MBB690
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
相關(guān)PDF資料
PDF描述
BSP255 P-channel enhancement mode vertical D-MOS transistor
BSS92 P-channel enhancement mode vertical D-MOS transistor
BSS92 P-Channel 200-V (D-S) MOSFETs
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