參數(shù)資料
型號: BSP205
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 86%
中文描述: 0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 65K
代理商: BSP205
April 1995
4
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP205
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Drain-source breakdown voltage
I
D
= 10
μ
A; V
GS
= 0
Drain-source leakage current
V
DS
= 48 V; V
GS
= 0
Gate-source leakage current
±
V
GS
= 20 V; V
DS
= 0
Gate threshold voltage
I
D
= 1 mA; V
DS
= V
GS
V
(BR)DSS
min.
60 V
I
DSS
max.
1.0
μ
A
±
I
GSS
max.
100 nA
min.
max.
1.5
3.5
V
V
V
GS(th)
Drain-source ON-resistance
I
D
= 200 mA ;
V
GS
= 10 V
typ.
max.
7.5
10
R
DS(on)
Transfer admittance
I
D
= 200 mA;
V
DS
= 15 V
min.
typ.
60
125
mS
mS
Y
fs
Input capacitance at f = 1 MHz;
V
DS
= 10 V; V
GS
= 0
typ.
max.
30
45
pF
pF
C
iss
Output capacitance at f = 1 MHz;
V
DS
= 10 V; V
GS
= 0
typ.
max.
20
30
pF
pF
C
oss
Feedback capacitance at f = 1 MHz;
V
DS
= 10 V; V
GS
= 0
typ.
max.
5
10
pF
pF
C
rss
Switching times (see Figs 2 and 3)
I
D
= 200 mA;
V
DD
= 50 V;
V
GS
= 0 to 10 V
t
on
typ.
max.
3
6
ns
ns
t
off
typ.
max.
10
15
ns
ns
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