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參數(shù)資料
| 型號： | BSO615CT |
| 廠商： | Infineon Technologies |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 0K |
| 描述： | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| 其它圖紙： | SO-8 Dual |
| 標準包裝： | 1 |
| 系列： | SIPMOS® |
| FET 型： | N 和 P 溝道 |
| FET 特點： | 邏輯電平門 |
| 漏極至源極電壓(Vdss)： | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C： | 3.1A，2A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C： | 110 毫歐 @ 3.1A，10V |
| Id 時的 Vgs(th)（最大）： | 2V @ 20µA |
| 閘電荷(Qg) @ Vgs： | 22.5nC @ 10V |
| 輸入電容 (Ciss) @ Vds： | 380pF @ 25V |
| 功率 - 最大： | 2W |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設(shè)備封裝： | PG-DSO-8 |
| 包裝： | 標準包裝 |
| 產(chǎn)品目錄頁面： | 1619 (CN2011-ZH PDF) |
| 其它名稱： | BSO615CXTINDKR |
5
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
28-PIN PLCC (J28-1)
Rev. 03
MICREL, INC.
2180 FORTUNE DRIVE
SAN JOSE, CA 95131
USA
TEL
+ 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
The information furnished by Micrel in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s
use or sale of Micrel Products for use in life support appliances, devices or systems is at Purchaser’s own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
2006 Micrel, Incorporated.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSO615N | 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:SIPMOS® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| BSO615N G | 功能描述:MOSFET SIPMOS Sm-Signal TRANSISTOR 60V 2.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSO615NG | 制造商:Infineon Technologies AG 功能描述:MOSFET Dual N-Ch 60V 2.6A Logic SOIC8 |
| BSO615NGHUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 2.6A 8-Pin SO 制造商:Infineon Technologies AG 功能描述:N-KANAL SMALL SIGNAL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC |
| BSO615NGXT | 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 60V 2.6A 8PIN DSO - Cut TR (SOS) |
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