參數(shù)資料
型號: BS62UV256TI
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit
中文描述: 超低功率/電壓CMOS SRAM的32K的× 8位
文件頁數(shù): 10/11頁
文件大小: 331K
代理商: BS62UV256TI
Revision 2.2
April 2001
8
PACKAGE
S: SOP
P: PDIP
J : SOJ
T: TSOP (8mm x 13.4mm)
D : DICE
ORDERING INFORMATION
BSI
BS62UV256
X X
Y Y
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
SPEED
15: 150ns
BS62UV256
R0201-BS62UV256
PACKAGE DIMENSIONS
θ
b
BASE METAL
WITH PLATING
c1
c
b1
SOP - 28
0.020 0.005X45
相關PDF資料
PDF描述
BS616UV4016EIG85 Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
BS616UV4016EIP85 Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
BS616UV4020 Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616UV4020BI Quadruple 2-Input Positive-AND Gate 14-SSOP -40 to 125
BS616UV4020DC Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
相關代理商/技術參數(shù)
參數(shù)描述
BS-632-1 制造商:PennEngineering (PEM) 功能描述:
BS6322 制造商:n/a 功能描述:Ships in 2 days
BS-632-2 制造商:PennEngineering (PEM) 功能描述:
BS640GBC3V 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
BS640GBC4V 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory