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參數(shù)資料
| 型號(hào)： | BS62UV2006STI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 超低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 320K |
| 代理商： | BS62UV2006STI |
R0201-BS62UV2006
Revision 1.1
Jan.
2004
8
ORDERING INFORMATION
BSI
PACKAGE DIMENSIONS
STSOP - 32
BS62UV2006
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
PACKAGE
S: SOP
T: TSOP (8mm x 20mm)
ST: Small TSOP (8mm x 13.4mm)
D: DICE
BS62UV2006 X X
Z
Y Y
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
SPEED
85: 85ns
10: 100ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62UV2006STI-10 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62UV2006STI-85 | 1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP |
| BS62UV2006STIG85 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62UV2006STIP10 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62UV2006STIP85 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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