參數(shù)資料
型號(hào): BS62LV2005
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Very Low Power/Voltage CMOS SRAM 256K X 8 bit
中文描述: 非常低功率/電壓CMOS SRAM的256K × 8位
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 279K
代理商: BS62LV2005
R0201-BS62LV2005
Revision 2.4
April 2002
10
BSI
REVISION HISTORY
Revision
Description
Date
Note
2.2
2001 Data Sheet release
Apr. 15, 2001
2.3
Modify Standby Current (Typ. and
Max.)
Jun. 29, 2001
2.4
Modify some AC parameters.
Modify 5V ICCSB1_Max(I-grade)
from 10uA to 25uA.
April,11,2002
BS62LV2005
相關(guān)PDF資料
PDF描述
BS62LV2005SC Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005SI Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005STC Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005STI Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005TC Very Low Power/Voltage CMOS SRAM 256K X 8 bit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS62LV2005SC 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005SI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005STC 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005STI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2005TC 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit