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參數(shù)資料
| 型號： | BS62LV2003SI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 279K |
| 代理商： | BS62LV2003SI |
R0201-BS62LV2003
Revision 2.4
April 2002
3
BSI
BS62LV2003
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1
Vcc - 0.2V, CE2
0.2V,
VIN
Vcc - 0.2V or VIN
0.2V
1.5
--
V
ICCDR
Data Retention Current
CE1
Vcc - 0.2V, CE2
0.2V,
VIN
Vcc - 0.2V or VIN
0.2V
--
0.01
0.5
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
ns
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VIL
Guaranteed Input Low
Voltage(2)
Vcc=3.0V
-0.5
--
0.8
V
VIH
Guaranteed Input High
Voltage(2)
Vcc=3.0V
2.0
--
Vcc+0.2
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
1
uA
IOL
Output Leakage Current
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3.0V
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3.0V
2.4
----V
ICC
Operating Power Supply
Current
CE1 = VIL, or CE2 = VIH,
IDQ = 0mA, F = Fmax(3)
Vcc=3.0V
--
20
mA
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA, F = Fmax(3)
Vcc=3.0V
--
1
mA
ICCSB1
Standby Current-CMOS
CE1 Vcc-0.2V, CE2 0.2V,
VIN Vcc-0.2V or VIN 0.2V
Vcc=3.0V
--
0.1
0.7
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC .
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
1. Vcc = 1.5V, TA = + 25OC
2. t
RC = Read Cycle Time
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
Vcc
VDR
1.5V
≥
CE1
Vcc - 0.2V
≥
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
Vcc
VDR
1.5V
CE2
0.2V
相關(guān)PDF資料 |
PDF描述 |
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| BS62LV2003TC | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2003TI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2005 | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2005SC | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2005SI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV2003STC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2003STI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2003TC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2003TI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2005 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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