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參數(shù)資料
| 型號(hào)： | BS616LV8012BI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 512K X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的為512k × 16位 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 255K |
| 代理商： | BS616LV8012BI |
Revision 2.1
Jan.
2004
7
R0201-BS616LV1611
BSI
BS616LV1611
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE2 high transition or CE1 low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write.
WRITE CYCLE2 (1,6)
t WC
t CW
(11)
(2)
t WP
t AW
t WHZ
(4,10)
t AS
t WR
(3)
t DH
t DW
D
IN
D
OUT
WE
CE1
ADDRESS
t OW
(7)
(8)
(8,9)
CE2
LB,UB
t BW
(5)
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