參數(shù)資料
型號： BS616LV8010FCG55
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Very Low Power/Voltage CMOS SRAM 512K X 16 bit
中文描述： 非常低功率/電壓CMOS SRAM的為512k × 16位
文件頁數(shù)： 4/8頁
文件大小： 255K
代理商： BS616LV8010FCG55
Revision 2.1
Jan.
2004
4
R0201-BS616LV1611
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
UNIT
t
AVAX
t
RC
Read Cycle Time
70
--
55
--
ns
t
AVQV
t
AA
Address Access Time
--
70
--
55
ns
t
ELQV
t
ACS1
Chip Select Access Time
(CE1)
--
70
--
55
ns
t
ELQV
t
ACS2
Chip Select Access Time
(CE2)
--
70
--
55
ns
t
BA
t
BA
Data Byte Control Access Time
(LB,UB)
--
35
--
30
ns
t
GLQV
t
OE
Output Enable to Output Valid
--
35
--
30
ns
t
ELQX
t
CLZ
Chip Select to Output Low Z
(CE2,CE1)
10
--
10
--
ns
t
BE
t
BE
Data Byte Control to Output Low Z (LB,UB)
5
--
5
--
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z
5
--
5
--
ns
t
EHQZ
t
CHZ
Chip Deselect to Output in High Z (CE2,CE1)
--
35
--
30
ns
t
BDO
t
BDO
Data Byte Control to Output High Z (LB,UB)
--
35
--
30
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
30
--
25
ns
t
AXOX
t
OH
Data Hold from Address Change
10
--
10
--
ns
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
READ CYCLE
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”O(jiān)FF ”STATE
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
BSI
BS616LV1611
(1)
1. tBA is 35ns/30ns (@speed=70ns/55ns) with address toggle .
tBA is 70ns/55ns (@speed=70ns/55ns) without address toggle .
NOTE :
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
CYCLE TIME : 70ns
MIN. TYP. MAX.
Vcc = 2.7~5.5V
Vcc = 3.0~5.5V
CYCLE TIME : 55ns
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相關代理商/技術參數(shù)
參數(shù)描述
BS616LV8010FCG70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FCP55 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FCP70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FI-55 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
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