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參數(shù)資料
| 型號： | BS616LV2023AI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| 中文描述： | 非常低功率/電壓CMOS SRAM的128K的× 16或256K × 8位開關 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 255K |
| 代理商： | BS616LV2023AI |
Revision 2.1
Jan.
2004
3
R0201-BS616LV1611
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2≦0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
V
ICCDR
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2≦0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
1.5
5.0
uA
tCDR
Chip Deselect to Data
Retention Time
0--
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC (2)
--
ns
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
1. Vcc = 1.5V, TA = + 25OC2. tRC = Read Cycle Time
3. IccDR(Max.) is 2.5uA at TA=70OC.
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
BSI
BS616LV1611
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
Vcc=3V
-0.5
--
0.8
VIL
Guaranteed Input Low
Voltage(3)
Vcc=5V
-0.5
--
0.8
V
Vcc=3V
2.0
--
Vcc+0.3
VIH
Guaranteed Input High
Voltage(3)
Vcc=5V
2.2
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE1 = VIH, or CE2 =ViL, or
OE = VIH, VI/O = 0V to Vcc
--
1
uA
Vcc=3V
--
0.4
VOL
Output Low Voltage
Vcc = Max, IOL= 2mA
Vcc=5V
--
0.4
V
Vcc=3V
2.4
--
VOH
Output High Voltage
Vcc = Min, IOH= -1mA
Vcc=5V
2.4
--
V
Vcc=3V
--
37
ICC
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH
, IDQ = 0mA, F = Fmax(2)
Vcc=5V
--
92
mA
Vcc=3V
--
1.3
ICCSB
Standby Current-TTL
CE1 = VIH or CE2 = VIL
, IDQ = 0mA
Vcc=5V
--
2.5
mA
Vcc=3V
--
3
20
ICCSB1
Standby Current-CMOS
CE1≧Vcc-0.2V or
CE2≦0.2V ;VIN≧Vcc - 0.2V
or VIN≦0.2V
Vcc=5V
--
15
220
uA
LOW V
CC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
Vcc
VDR
1.5V
≥
CE1
Vcc - 0.2V
≥
LOW V
CC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
Vcc
VDR ≧ 1.5V
CE2 ≦ 0.2V
(4)
(5)
70ns
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/t
RC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation.
5.IccsB1 is 10uA/110uA at Vcc=3.0V/5.0V and TA=70oC.
(3)
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相關代理商/技術參數(shù) |
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|---|---|
| BS616LV2023DC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2023DI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2025 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2025AC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2025AI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
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