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參數資料
| 型號： | BS616LV1611FCG55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的100萬× 16位 |
| 文件頁數： | 6/8頁 |
| 文件大?。?/td> | 255K |
| 代理商： | BS616LV1611FCG55 |
Revision 2.1
Jan.
2004
6
R0201-BS616LV1611
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
BSI
BS616LV1611
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
UNIT
t
AVAX
t
WC
Write Cycle Time
70
--
55
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
70
--
55
--
ns
t
AVWL
t
AS
Address Setup Time
0
----0
--
ns
t
AVWH
t
AW
Address Valid to End of Write
70
--
55
--
ns
t
WLWH
t
WP
Write Pulse Width
35
--
30
--
ns
t
WHAX
t
WR
Write recovery Time
(CE2,CE1,WE)
0
--
0
--
ns
t
BW
t
BW
Date Byte Control to End of Write
(LB,UB)
30
--
25
--
ns
t
WLQZ
t
WHZ
Write to Output in High Z
--
30
--
25
ns
t
DVWH
t
DW
Data to Write Time Overlap
30
--
25
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
----0
--
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
30
--
25
ns
t
WHOX
t
OW
End of Write to Output Active
5
--
5
--
ns
WRITE CYCLE1 (1)
t WR
t WC
(3)
t CW
(11)
t BW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
(3)
t DH
t DW
D
IN
D
OUT
WE
CE1
OE
ADDRESS
(5)
CE2
(5)
LB,UB
(1)
1. tBW is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; tBW is 70ns/55ns (@speed=70ns/55ns) without address toggle.
NOTE :
CYCLE TIME : 70ns
MIN. TYP. MAX.
Vcc = 2.7~5.5V
Vcc = 3.0~5.5V
CYCLE TIME : 55ns
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BS616LV1611FCG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611FCP55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611FCP70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611FI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
| BS616LV1611FI-55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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