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參數(shù)資料
| 型號(hào)： | BS616LV1011EIG55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的64K的× 16位 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 255K |
| 代理商： | BS616LV1011EIG55 |
Revision 2.1
Jan.
2004
5
R0201-BS616LV1611
BSI
BS616LV1611
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE1 transition low.
4. OE = VIL
.
5. The parameter is guaranteed but not 100% tested.
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
READ CYCLE2 (1,3,4)
t CLZ
t CHZ(5)
D
OUT
CE1
(5)
t ACS1
CE2
t ACS2
READ CYCLE3 (1,4)
t OH
t RC
t OE
D
OUT
LB,UB
CE1
OE
ADDRESS
t CLZ
(5)
t ACS1
t CHZ
(1,5)
t OHZ (5)
t OLZ
t AA
t BDO
t BA
t BE
CE2
t ACS2
相關(guān)PDF資料 |
PDF描述 |
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| BS616LV1011EIG70 | Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| BS616LV1011EIP55 | Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| BS616LV1011EIP70 | Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| BS616LV1012 | Very Low Power/Voltage CMOS SRAM |
| BS616LV1012AC | Very Low Power/Voltage CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS616LV1011EIG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| BS616LV1011EIP55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| BS616LV1011EIP70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 64K X 16 bit |
| BS616LV1012 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM |
| BS616LV1012AC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM |
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