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參數(shù)資料
| 型號(hào)： | BS108 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（N溝道）（不適用通道的DMOS晶體管） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | BS108 |
FEATURES
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
DMOS Transistors (N-Channel)
G
S
D
.181 (4.6)
m
.
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
.098 (2.5)
max.
.022 (0.55)
4/98
BS108
On special request, this transistor is also manu-
factured in the pin configuration TO-18.
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
240
V
Drain-Gate Voltage
V
DGS
240
V
Gate-Source Voltage (pulsed)
V
GS
±20
V
Drain Current (continuous)
I
D
230
mA
Power Dissipation at T
amb
= 25 °C
P
tot
0.83
1)
W
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Inverse Diode
Symbol
Value
Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
0.75
A
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.75 A, T
j
= 25 °C
V
F
0.85
V
High breakdown voltage
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Specially suited for telephone subsets
相關(guān)PDF資料 |
PDF描述 |
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| BS109 | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| BS123 | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| BS170 | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.5A的N溝道增強(qiáng)型MOSFET晶體管) |
| BS208 | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
| BS209 | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS108 AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108 SB36890\E7 | 功能描述:MOSFET N-Channel 240V 0.23A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108,126 | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108/01 AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108/01,126 | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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