參數(shù)資料
型號(hào): BS108
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: N-channel enhancement mode vertical D-MOS transistor(N通道增強(qiáng)型垂直DMOS 晶體管)
中文描述: 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 56K
代理商: BS108
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BS108
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
envelope, intended for use as a line
current interruptor in telephone sets
and for applications in relay,
high-speed and line transformer
drivers.
PINNING
PIN
DESCRIPTION
1
2
3
source
gate
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
R
DS(on)
V
GS(th)
drain-source voltage
DC drain current
drain-source on-resistance
gate-source threshold voltage
200
250
8
1.8
V
mA
V
Fig.1 Simplified outline (TO-92) and symbol.
handbook, halfpage
1
3
2
MSB033
handbook, 2 columns
s
d
g
MBB076 - 1
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