- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373026 > BRX44 (CENTRAL SEMICONDUCTOR CORP) 0.8 to 110 Amperes RMS 15 to 1200 Volts PDF資料下載
參數(shù)資料
| 型號： | BRX44 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | 0.8 to 110 Amperes RMS 15 to 1200 Volts |
| 中文描述： | 0.8 A, 30 V, SCR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 82K |
| 代理商： | BRX44 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92)
package which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200
μ
A Maximum
Low Reverse and Forward Blocking Current — 100
μ
A Maximum, TC = 125
°
C
Low Holding Current — 5 mA Maximum
Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(TJ = 25 to 125
°
C, RGK = 1000
)
BRX44
BRX45
BRX46
BRX47
BRX49
VDRM, VRRM
30
60
100
200
400
Volts
Forward Current RMS
(All Conduction Angles)
IT(RMS)
0.8
Amp
Peak Forward Surge Current, TA = 25
°
C
(1/2 Cycle, Sine Wave, 60 Hz)
ITSM
8
Amps
Circuit Fusing Considerations, TA = 25
°
C
(t = 8.3 ms)
I2t
0.15
A2s
Peak Gate Power — Forward, TA = 25
°
C
Peak Gate Current Forward, TA = 25
°
C
(300
μ
s, 120 PPS)
PGM
IGFM
0.1
Watt
1
Amp
Peak Gate Voltage — Reverse
VGRM
TJ
5
Volts
Operating Junction Temperature Range @ Rated
VRRM and VDRM
–40 to +125
°
C
Storage Temperature Range
Tstg
–40 to +150
°
C
Lead Solder Temperature
(
1.5 mm from case, 10 s max.)
+230
°
C
*European part numbers only . Package is Case 29 with Leadform 18.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by BRX44/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29-04
(TO-226AA)
STYLE 3
WITH TO-18 LEADFORM*
SCRs
0.8 AMPERE RMS
30 TO 400 VOLTS
相關PDF資料 |
PDF描述 |
|---|---|
| BRY55-30THRU600 | Super Fast Rectifier Diodes |
| BS03015NQ67040-S4345 | 30V N-Channel PowerTrench MOSFET |
| BS0604NS2Q6740-S4175 | 30V N-Channel PowerTrench MOSFET |
| BS08A | SILICON BIDIRECTIONAL SWITCH|9V V(BO) MAX|200UA I(S)|TO-92 |
| BS170 | N-channel vertical D-MOS transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BRX44THRUBRX47BRX49 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCRs 0.8 AMPERE RMS 30 TO 400 VOLTS |
| BRX45 | 制造商:BOCA 制造商全稱:Boca Semiconductor Corporation 功能描述:SCRs (Silicon Controlled Rectifiers) |
| BRX46 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:0.8 to 110 Amperes RMS 15 to 1200 Volts |
| BRX47 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:0.8 to 110 Amperes RMS 15 to 1200 Volts |
| BRX48 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:0.8 to 110 Amperes RMS 15 to 1200 Volts |
發(fā)布緊急采購，3分鐘左右您將得到回復。