參數(shù)資料
型號(hào): BR101
廠商: RECTRON LTD
元件分類: 參考電壓二極管
英文描述: SINGLE-PHASE SILICON BRIDGE RECTIFIER
中文描述: 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: ROHS COMPLIANT, PLASTIC, BR-10, 4 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 58K
代理商: BR101
1997 Jul 24
3
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
It is permitted to exceed this voltage during the discharge of a capacitor of max. 390 pF, provided the charge does
not exceed 50 nC.
Provided the I
E
rating is not exceeded.
2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
CBO
V
CER
V
EBO
I
C
I
CM
I
E
I
ERM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
emitter current (DC)
repetitive peak emitter current
open emitter
R
BE
= 10 k
open collector; note 1
note 2
50
50
5
175
175
175
2.5
V
V
V
mA
mA
mA
A
t
p
= 10
μ
s;
δ
= 0.01
PNP transistor
V
CBO
V
CEO
V
EBO
I
E
I
ERM
collector-base voltage
collector-emitter voltage
emitter-base voltage
emitter current (DC)
repetitive peak emitter current
open emitter
open base
open collector
50
50
50
175
2.5
V
V
V
mA
A
t
p
= 10
μ
s;
δ
= 0.01
Combined device
P
tot
T
stg
T
j
T
amb
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
25
°
C
65
65
275
+150
150
+150
mW
°
C
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
0.45
K/mW
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