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參數(shù)資料
| 型號： | BQ4015YMB-120 |
| 英文描述： | Avalanche Bridge Rectifiers |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 450K |
| 代理商： | BQ4015YMB-120 |
6
bq4013/Y
Notes:
1.
WE is held high for a read cycle.
2.
Device is continuously selected: CE = OE = V
IL
.
3.
Address is valid prior to or coincident with CE transition low.
4.
OE = V
IL
.
5.
Device is continuously selected: CE = V
IL
.
Read Cycle No. 3 (OE Access)
1,5
Read Cycle No. 1 (Address Access)
1,2
Read Cycle No. 2 (CE Access)
1,3,4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BQ4015YMB-120N | Avalanche Bridge Rectifiers |
| BQ4015YMB-85 | Avalanche Bridge Rectifiers |
| BQ4845P | Fast Recovery Glass Passivated Rectifier Diodes |
| BQ4845S | Fast Recovery Glass Passivated Rectifier Diodes |
| BQ4845YP | Fast Recovery Glass Passivated Rectifier Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BQ4015YMB-120N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| BQ4015YMB-85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| BQ4015YMB-85N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| BQ4015YMS-120 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015YMS-120N | 制造商:TI 制造商全稱:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
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