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參數(shù)資料
| 型號： | BQ4015MB-120 |
| 英文描述： | Avalanche Bridge Rectifiers |
| 中文描述： | NVRAM中（基于電池） |
| 文件頁數(shù)： | 8/13頁 |
| 文件大小： | 450K |
| 代理商： | BQ4015MB-120 |
8
bq4013/Y
Write Cycle No. 1 (WE-Controlled)
1,2,3
Write Cycle No. 2 (CE-Controlled)
1,2,3,4,5
Notes:
1.
CE or WE must be high during address transition.
2.
Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the
outputs must not be applied.
3.
If OE is high, the I/O pins remain in a state of high impedance.
4.
Either t
WR1
or t
WR2
must be met.
5.
Either t
DH1
or t
DH2
must be met.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BQ4015MB-85 | Avalanche Bridge Rectifiers |
| BQ4015YMB-120 | Avalanche Bridge Rectifiers |
| BQ4015YMB-120N | Avalanche Bridge Rectifiers |
| BQ4015YMB-85 | Avalanche Bridge Rectifiers |
| BQ4845P | Fast Recovery Glass Passivated Rectifier Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BQ4015MB-85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| BQ4015MS-120 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015MS-120N | 制造商:TI 制造商全稱:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015MS-70 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015MS-70N | 制造商:TI 制造商全稱:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
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