參數(shù)資料
型號(hào): BPW17N
廠商: VISHAY SEMICONDUCTORS
元件分類: 光敏三極管
英文描述: Phototransistor Chip Silicon 825nm 2-Pin T-3/4
中文描述: Photodetector Transistors NPN Phototransistor 32V 100mW 825nm
文件頁數(shù): 1/5頁
文件大?。?/td> 87K
代理商: BPW17N
BPW17N
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
1
Document Number: 81516
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon NPN Phototransistor
DESCRIPTION
BPW17N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-3/4 plastic package with lens. It is
sensitive to visible and near infrared radiation. On PCB this
package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
Package type: leaded
Package form: T-
Dimensions (in mm): 1.8
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 12°
Comliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8638-1
PRODUCT SUMMARY
COMPONENT
BPW17N
I
ca
(mA)
1.0
(deg)
± 12
λ
0.1
(nm)
450 to 1040
ORDERING INFORMATION
ORDERING CODE
BPW17N
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm
2
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
55 °C
t
3 s
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