參數(shù)資料
型號: BOOK
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運(yùn)算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數(shù): 16/19頁
文件大?。?/td> 467K
代理商: BOOK
Low consumption current(power save mode)
Low distortion : IIP3 = 7.5 dBm
Low noise : NF = 0.9 dB(@f = 850 MHz)
MC : Matching Circuit
GN01121B
Low Noise Amplifier with through pass switch for CDMA
Features
Characteristics Diagram
Package Outline
Measurement Circuit Diagram
16
GaAs MMICs for Cellular Phone
1 : RF input
2 : V
ICONT
3 : TM
4 : V
5 : GND
6 : V
DD
I
G
5
°
10
°
2
±
1
±
1
3
2
0.2
±0.05
0.12
+0.05
0
±
(
1.3
±0.1
2.0
±0.1
0
0
±
0
+
6
5
4
(0.65) (0.65)
780
800
820
840
860
880
900
920
-10
-5
0
5
10
15
20
0
0.5
1.5
2.5
3.5
4.5
5.5
1
2
3
4
5
6
Frequency f (MHz)
P
N
V
= 2.9 V
Mode1:V
DD
= 2.9 V, V
ICONT
= 2.9 V
Mode2:V
DD
= 2.9 V, V
ICONT
= Open
Mode3:V
DD
= 0 V, V
ICONT
= Open
Mode2 PG
Mode3 NF
Mode1 PG
Mode3 PG
Mode2 NF
Mode1 NF
0
5
10
15
-30
-5
0
5
10
15
20
Circuit current I
DD
(mA)
P
Mode2
Mode1
Mode3
PG
IIP3
P
IN
P
OUT
Amplifier1
(Gain1, I
DD
)
P
IN
P
OUT
PG, NF
f
PG, IIP3
I
DD
Mode1 : Low input mode
Mode3 : Through pass operation
Gain = 15 dB, I
DD
= 10 mA, NF = 0.9 dB
Gain =-4 dB, I
DD
= 0 mA, NF = 5 dB
Note) In the case of using for overseas' models, please
apply smaller inductance than 33nH at IN terminal
(pin 1) and than 12nH at V terminal(pin 6).
Unit:mm
S-Mini Type.6-pin
6
100 pF//22 nF
RF input
10 nF
0.5 pF
12 nH
15 nH
33 nH
20 k
Out
V
ICONT
V
DD
V
REF
5
4
1
2
3
100 pF
100 pF
10 nF
MC
相關(guān)PDF資料
PDF描述
BOS500 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
BOS801 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
BOS502 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
BOS751 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
BOS800 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
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